features: high gain bandwidth product f t = 10 ghz typ @ i c = 10 ma ? low noise figure 1.6 db typ at 1 ghz 2.0 db typ at 2 ghz high gain |s 21 | 2 = 18.1 db @ 1 ghz 12.8 db @ 2 ghz dice, plastic, hermetic and surface mount packages available performance data: electrical characteristics (t a = 25 o c) npn low noise silicon micro w a ve transis t or product d a t a sheet bipolarics, inc. part number B12V105 symbol parameters & conditions unit min. typ. max. v ce =8v, i c = 10 ma unless stated v cbo collector-base voltage 20 v v ceo collector-emitter voltage 12 v v ebo emitter-base voltage 1.5 v i c cont collector current 40 ma t j junction temperature 200 o c t stg storage temperature -65 to 150 o c symbol parameters rating units absolute maximum ratings: insertion power gain: f = 1.0 ghz, i c = 10 ma 17.5 i c = 25 ma 18.1 f = 2.0 ghz, i c = 10 ma 12.8 i c = 25 ma 12.6 nf noise figure: v ce =8v, i c = 2ma f = 1.0 ghz db 1.6 z s = 50 ? c cb collector base capacitance: v cb = 8v f = 1mhz pf 0.11 i cbo collector cutoff current : v cb =8v a 0. 2 v ce = 8v, i c = 10 ma f t |s 21 | 2 gain bandwidth product ghz 10 p 1d b power output at 1db compression: f = 1.0 ghz dbm 12 g 1d b gain at 1db compression: f = 1.0 ghz dbm 15 h fe forward current transfer ratio: f = 1mhz 50 100 250 i ebo emitter cutoff current : v eb =1v a 1.0 description and applications: bipolarics' B12V105 is a high performance silicon bipolar transistor intended for use in low noise application at vhf, uhf and microwave frequencies. high performance low noise performance can be realized at 2 ma or less making the B12V105 an excellent choice for battery applications. from 10 ma to greater than 25 ma, f t is nominally 10 ghz. maximum recommended continuous current is 40 ma. a broad range of packages are offered including sot-23, sot- 143, plastic and ceramic 0. 0 85 " micro-x, 0. 0 70 " stripline and unencapsulated dice.
bipolarics, inc. part number B12V105 npn low noise silicon microwave transistor product data sheet 0.20000 0.8709 -19 5.888 172 0.0316 80 0.9549 -10 15.4 0.40000 0.8511 -32 4.623 157 0.0478 76 0.9120 -17 13.3 0.60000 0.8128 -45 4.027 142 0.0660 61 0.8511 -25 12.1 0.80000 0.7762 -55 3.388 137 0.0776 59 0.8511 -32 10.6 1.00000 0.7244 -68 3.273 126 0.0876 53 0.7161 -34 10.3 1.20000 0.6760 -80 3.162 122 0.0933 51 0.6998 -37 10.0 1.40000 0.6309 -100 3.235 116 0.1035 48 0.6531 -47 10.2 1.60000 0.5888 -114 3.019 106 0.1071 47 0.6165 -49 9.6 1.80000 0.5754 -124 2.786 102 0.1096 46 0.6456 -51 8.9 2.00000 0.5623 -137 2.722 88 0.1148 46 0.6025 -54 8.7 2.20000 0.5370 -144 2.691 82 0.1174 45 0.5888 -57 8.6 2.40000 0.5248 -165 2.317 86 0.1188 46 0.5370 -63 7.3 2.60000 0.5370 -174 2.264 84 0.1216 48 0.5308 -64 7.1 2.80000 0.5128 178 2.187 78 0.1244 49 0.5188 -70 6.8 3.00000 0.5069 173 1.949 78 0.1258 50 0.4897 -72 5.8 3.20000 0.4954 166 1.883 73 0.1303 51 0.5011 -78 5.5 3.40000 0.5011 162 1.737 70 0.1333 53 0.4677 -81 4.8 3.60000 0.5128 153 1.717 69 0.1348 55 0.4773 -87 4.7 3.80000 0.5432 152 1.566 63 0.1333 57 0.4773 -96 3.9 4.00000 0.5308 152 1.479 64 0.1348 60 0.4677 -93 3.4 4.20000 0.5188 144 1.445 58 0.1380 61 0.5069 -102 3.2 page 2 (note: s-parameters were taken in a ceramic micro-x package; see package outline 35 ) freq. s11 s21 s12 s22 s21 ghz mag ang mag ang mag ang mag ang db typical s parameters: bias condition: v ce = 5 v, i c = 2 ma s-matrix: z s = 50.0 + j 0.0 z l = 50.0 + j 0.0
page 3 0.20000 0.7762 -24 12.02 151 0.0223 74 0.9225 -14 21.6 0.40000 0.7885 -44 10.47 134 0.0398 72 0.8709 -25 20.4 0.60000 0.6382 -60 8.810 106 0.0512 60 0.7413 -31 18.9 0.80000 0.6165 -72 7.244 80 0.0568 59 0.7079 -36 17.2 1.00000 0.5248 -88 6.456 72 0.0616 57 0.6095 -38 16.2 1.20000 0.4677 -102 6.025 57 0.0691 57 0.5559 -40 15.6 1.40000 0.4168 -124 5.188 44 0.0776 57 0.5495 -48 14.3 1.60000 0.3672 -138 4.677 30 0.0822 57 0.5128 -46 13.4 1.80000 0.3548 -146 4.168 20 0.0860 58 0.5069 -50 12.4 2.00000 0.3467 -158 3.901 9 0.0954 59 0.4677 -52 12.0 2.20000 0.3548 -176 3.801 -4 0.1047 60 0.4570 -58 11.6 2.40000 0.3235 171 3.388 -17 0.1071 62 0.4216 -60 10.6 2.60000 0.3672 163 3.273 -27 0.1122 63 0.4315 -62 10.3 2.80000 0.3801 157 3.019 -39 0.1174 63 0.4265 -67 9.6 3.00000 0.3935 153 2.818 -49 0.1230 64 0.4168 -70 9.0 3.20000 0.4120 146 2.722 -60 0.1318 65 0.4073 -75 8.7 3.40000 0.4216 142 2.570 -70 0.1348 65 0.3890 -79 8.2 3.60000 0.4786 135 2.511 -82 0.1380 67 0.3890 -83 8.0 3.80000 0.4731 132 2.290 -92 0.1412 69 0.3981 -86 7.2 4.00000 0.4841 131 2.187 -101 0.1445 70 0.3870 -88 6.8 4.20000 0.5495 128 2.162 -112 0.1548 68 0.3801 -99 6.7 product data sheet npn low noise silicon microwave transistor bipolarics, inc. part number B12V105 freq. s11 s21 s12 s22 s21 ghz mag ang mag ang mag ang mag ang db (note: s-parameters were taken in a ceramic micro-x package; see package outline 35 , 36 ) typical s parameters: bias condition: v ce = 5 v, i c = 5 ma s-matrix: z s = 50.0 + j 0.0 z l = 50.0 + j 0.0
product data sheet freq. s11 s21 s12 s22 s21 ghz mag ang mag ang mag ang mag ang db 0.20000 0.6025 -46 15.84 160 0.0177 70 0.8912 -17 24.0 0.40000 0.5888 -78 14.12 144 0.0301 65 0.7762 -30 23.0 0.60000 0.4954 -109 11.09 124 0.0407 56 0.6309 -36 20.9 0.80000 0.4786 -122 9.332 118 0.0457 58 0.6095 -40 19.4 1.00000 0.4265 -136 7.498 109 0.0506 58 0.5128 -39 17.5 1.20000 0.4027 -151 6.456 102 0.0537 60 0.5248 -42 16.2 1.40000 0.4027 -168 6.025 99 0.0616 62 0.4677 -49 15.6 1.60000 0.3935 -180 5.308 94 0.0676 62 0.4315 -50 14.5 1.80000 0.3890 176 4.897 90 0.0707 64 0.4415 -52 13.8 2.00000 0.3890 170 4.518 85 0.0741 66 0.4027 -53 13.1 2.20000 0.4216 158 4.365 82 0.0803 65 0.4120 -58 12.8 2.40000 0.4168 149 3.890 79 0.0812 67 0.3758 -62 11.8 2.60000 0.4623 145 3.715 77 0.0912 69 0.3845 -64 11.4 2.80000 0.4786 140 3.388 74 0.0933 68 0.3672 -70 10.6 3.00000 0.4897 138 3.198 74 0.1000 71 0.3758 -71 10.1 3.20000 0.4841 133 3.019 71 0.1059 70 0.3880 -76 9.6 3.40000 0.4954 128 2.818 67 0.1011 72 0.3630 -75 9.0 3.60000 0.5495 123 2.660 66 0.1188 72 0.3935 -84 8.5 3.80000 0.5754 121 2.371 62 0.1188 72 0.3548 -90 7.5 4.00000 0.5821 120 2.137 62 0.1230 76 0.3890 -86 6.6 4.20000 0.5888 117 2.018 58 0.1318 74 0.3548 -94 6.1 page 4 bipolarics, inc. part number B12V105 npn low noise silicon microwave transistor typical s parameters: bias condition: v ce = 8 v, i c = 10 ma s-matrix: z s = 50.0 + j 0.0 z l = 50.0 + j 0.0 (note: s-parameters were taken in a ceramic micro-x package; see package outline 35 , 36 )
bipolarics, inc. part number B12V105 npn low noise silicon micr o w ave transistor product data sheet freq. s11 s21 s12 s22 s21 g h z mag a n g mag a n g mag a n g mag a n g db 0.20000 0.4466 -55 17.78 154 0.0149 56 0.7585 -22 25.0 0.40000 0.4265 -98 14.62 136 0.0234 62 0.6456 -34 23.3 0.60000 0.3715 -127 12.44 116 0.0301 64 0.5069 -33 21.9 0.80000 0.3672 -140 9.855 105 0.0342 68 0.5011 -36 19.9 1.00000 0.3467 -145 8.035 102 0.0407 69 0.4466 -33 18.1 1.20000 0.3019 -158 7.244 96 0.0467 71 0.4786 -34 17.2 1.40000 0.3311 -165 6.025 93 0.0543 72 0.4027 -43 15.6 1.60000 0.3801 -172 5.308 88 0.0638 72 0.3715 -41 14.5 1.80000 0.4027 -176 4.677 86 0.0645 74 0.3630 -46 13.4 2.00000 0.4120 168 4.265 84 0.0699 76 0.3630 -47 12.6 2.20000 0.4365 157 4.027 80 0.0785 77 0.3548 -53 12.1 2.40000 0.4315 149 3.672 77 0.0915 77 0.3273 -57 11.3 2.60000 0.4731 146 3.467 76 0.0891 78 0.3235 -61 10.8 2.80000 0.4897 141 3.235 73 0.0933 78 0.3162 -67 10.2 3.00000 0.4786 141 3.019 73 0.1000 80 0.3198 -69 9.6 3.20000 0.4954 137 2.804 70 0.1071 80 0.3198 -74 9.2 3.40000 0.5308 134 2.732 68 0.1109 79 0.2951 -76 8.7 3.60000 0.5559 128 2.630 65 0.1202 80 0.3162 -82 8.4 3.80000 0.5432 128 2.398 64 0.1206 79 0.2851 -94 7.6 4.00000 0.5370 129 2.364 64 0.1258 81 0.3162 -91 7.1 4.20000 0.5623 125 2.137 61 0.1348 80 0.3162 -90 6.6 page 5 typical s parameters: bias condition: v ce = 8 v, i c = 25 ma s-matrix: z s = 50.0 + j 0.0 z l = 50.0 + j 0.0 (note: s-parameters were taken in a ceramic micro-x package; see package outline 35 , 3 6 )
npn low noise silicon microwave transistor page 6 .020 .51 5 .065 2.15 .008+.002 .20+.050 1 2 3 4 .215+.010 5.46+.25 .020 .51 .60+0.10 1.52+.26 bipolarics, inc. part number B12V105 8 6 package: 0. 0 85 " plastic micro-x, surface mount 8 7 package: 0. 0 85 " plastic micro-x, short lead 04 package: 0. 145 " plastic macro-x 85 package: 0. 0 85 " plastic micro-x 0.02 .51 0.008+0.002 0.203+0.051 0.032+0.015 2.34+0.38 .020+.010 0.51+.25 0.106+0.015 2.67+0.38 0.026+0.001 0.66+0.13 0.085+0.005 2.16+0.13 0.060+0.01 1.52+0.25 1 2 3 4
npn low noise silicon microwave transistor page 7 bipolarics, inc. 02 package: sot-23 14 package: sot-143 0.30 0.51 1.39 1.57 2.25 2.75 0.45 0.60 0.95 2.65 3.04 0.00 0.10 0.45 0.60 0.10 0.79 1.1 1.90 02 j package: sot-23j part number B12V105 9 2 package: to-92
bipolarics, inc. part number B12V105 npn low noise silicon microwave transistor ordering information: p/n including pkg temp range/app B12V105 00 -55 to +125 ? c B12V105 02 -40 to +85 ? c B12V105 14 -40 to +85 ? c B12V105 35 -55 to +125 ? c B12V105 92 -40 to +85 ? c notes: (unless otherwise specified) 1. dimensions are in 2. tolerances: in .xxx = .005 mm .xx = .13 3. all dimensions nominal; subject to change without notice lead 1 2 3 4 14 , 85 , 8 6 , 87 , 35 base emitter collector emitter & 04 packages bipolarics, inc. 46 766 la ke vi ew b lv d. fr em ont, c a 94 53 8 phone: (510) 226-6565 fax: (510) 226-6765 85 package: micro-x 0. 0 85 " ceramic (mm) page 8
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